Monday, August 27, 2007

Applied Physics Letters 89, 202101 (2006)

InGaAs quantum dot molecules around self-assembled GaAs nanomound templates

J. H. Lee, Zh. M. Wang, N. W. Strom, Yu. I. Mazur, and G. J. Salamo
Physics Department, University of Arkansas, Fayetteville, Arkansas 72701

Several distinctive self-assembled InGaAs quantum dot molecules (QDMs) are studied. The QDMs self-assemble around nanoscale-sized GaAs moundlike templates fabricated by droplet homoepitaxy. Depending on the specific InAs monolayer coverage, the number of QDs per GaAs mound ranges from two to six (bi-QDMs to hexa-QDMs). The Ga contribution from the mounds is analyzed in determining the morphologies of the QDMs, with respect to the InAs coverages ranging between 0.8 and 2.4 ML. Optical characterization shows that the resulting nanostructures are high-quality nanocrystals.

Featured on the Journal Cover of Applied Physics Letter, Volume 89, Issue 20, 2006.

Further reading on Quantum-Dot Molecules:
Self-Organization of InAs Quantum-Dot Clusters Directed by Droplet Homoepitaxy
Zhiming M. Wang, Baolai Liang, Kimberly A. Sablon, Jihoon Lee, Yuriy I. Mazur, Neil W. Strom, and Gregory J. Salamo
Small 3, 235 (2007)
Self-organization of quantum-dot pairs by high-temperature droplet epitaxy
Zhiming M. Wang, Kyland Holmes, Yuriy I. Mazur, Kimberly A. Ramsey, and Gregory J. Salamo
Nanoscale Research Letters 1, 57 (2006)
Zero-strain GaAs quantum dot molecules as investigated by x-ray diffuse scattering
M. Hanks, M. Schmidbauer, D. Grigoriev, P. Schafer, R. Kohler, T. H. Metzger, Zh. M. Wang, Yu. I. Mazur, and G. J. Salamo
Applied Physics Letters 89, 053116 (2006)