Applied Physics Letters 84, 1756 (2004)

Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A

H. Wen, Z. M. Wang, and G. J. Salamo
Physics Department, University of Arkansas, Fayetteville, Arkansas 72701

Generally (In,Ga)As strained growth on GaAs surfaces results in zero-dimensional quantum dots. The formation of one-dimensional quantum wires is demonstrated during (In,Ga)As molecular-beam-epitaxial growth on GaAs(311)A at high temperature. The wires are running along the [–233] direction. Atomically resolved scanning tunneling microscopy images reveal that the wires are triangular-shaped in cross section and the two side bonding facets are {11,5,2}. These results are discussed in terms of a mechanism of strain-driven facet formation.

Further reading on Quantum Wires:
Strong optical nonlinearity in strain-induced laterally ordered In0.4Ga0.6As quantum wires on GaAs (311)A substrate
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