Friday, August 24, 2007

Applied Physics Letters 81, 2965 (2002)

GaAs(311) templates for molecular beam epitaxy growth: surface morphologies and reconstruction

Z. M. Wang, V. R. Yazdanpanah, J. L. Shultz, and G. J. Salamo
Physics Department, University of Arkansas, Fayetteville, Arizona 72701

Morphologies of GaAs(311) surfaces grown by molecular beam epitaxy were investigated by in situ reflection high-energy electron diffraction and scanning tunnelling microscope. In addition to the (8×1) reconstruction, two surface phases, GaAs(311)A-(4×1) and GaAs(311)B-(2×1) were observed. Both of these surfaces are characterized by wider, atomically smooth terraces with much lower structural anisotropy, when compared to the (8×1) reconstructed GaAs(311) surfaces. The observed surfaces have potential as templates for the growth of organized quantum dots, wires, and wells.

Further reading on High-Index Surfaces:
Morphological instability of GaAs (7 1 1)A: A transition between (1 0 0) and (5 1 1) terraces
V.R. Yazdanpanah, Zh.M. Wang, and G.J. Salamo
Journal of Crystal Growth 280, 2 (2005)
RHEED study of GaAs(3 3 1)B surface
V.R. Yazdanpanah, Zh.M. Wang, Sh. Seydmohamadi, and G.J. Salamo
Journal of Crystal Growth 277, 72 (2005)
Highly anisotropic morphologies of GaAs(331) surfaces
V. R. Yazdanpanah, Z. M. Wang, and G. J. Salamo
Applied Physics Letters 82, 1766 (2003)
Molecular-beam epitaxial growth and surface characterization of GaAs(311)B
Z.M.Wang, L.Daweritz, and K.H.Ploog
Applied Physics Letters 78, 712 (2001)