Sunday, August 26, 2007

Applied Physics Letters 84, 1931 (2004)

Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

Z. M. Wang, K. Holmes, Yu. I. Mazur, and G. J. Salamo
Physics Department, University of Arkansas, Fayetteville, Arkansas 72701

Nanostructure evolution during the growth of multilayers of In0.5Ga0.5As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 µm are obtained by adjusting the In0.5Ga0.5As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices.

"A string of dots", Editors' Choice: Highlight of the Recent Literature
Science 303, 1947 (2004)

Further reading on Quantum Dot Chains:
Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100)
M. Schmidbauer, Zh. M. Wang, Yu. I. Mazur, P. M. Lytvyn, G. J. Salamo, D. Grigoriev, P. Schäfer, R. Köhler, and M. Hanke
Applied Physics Letters 91, 093110 (2007)
Featured on the Journal Cover of Volume 91, Issue 9
One-dimensional postwetting layer in InGaAs/GaAs(100) quantum-dot chains
Zh. M. Wang, Yu. I. Mazur, J. L. Shultz, G. J. Salamo, and T. D. Mishima, and M. B. Johnson
Journal of Applied Physics 99, 033705 (2006);
Direct Spectroscopic Evidence for the Formation of One-Dimensional Wetting Wires During the Growth of InGaAs/GaAs Quantum Dot Chains
Xiaoyong Wang, Zhiming M. Wang, Baolai Liang, Gregory J. Salamo, and Chih-Kang Shih,
Nano Letters 6, 1847 (2006);
Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation
M. Schmidbauer, Sh. Seydmohamadi, D. Grigoriev, Zh. M. Wang, Yu. I. Mazur, P. Schafer, M. Hanke, R. Kohler, and G. J. Salamo
Physics Review Letters 96, 066108 (2006);
Photoluminescence linewidths from multiple layers of laterally self-ordered InGaAs quantum dots
Zh. M. Wang, Y. I. Mazur, Sh. Seydmohamadi, G. J. Salamo, and H. Kissel
Applied Physics Letters 87, 213105 (2005);
Control on self-organization of InGaAs/GaAs(100) quantum-dot chains
Zh. M. Wang, Yu. I. Mazur, K. Homles, G. J. Salamo,
Journal of Vacuum Science and Technology B 23, 1732 (2005);
Selective etching of InGaAs/GaAs(100) multilayers of quantum-dot chains
Zh. M. Wang, L. Zhang, K. Holmes, and G. J. Salamo
Applied Physics Letters 86, 143106 (2005);
High anisotropy of lateral alignment in multilayered (In,Ga)As/GaAs(100) quantum dot structures
Zh. M. Wang, H. Churchill, C. E. George, and G. J. Salamo
Journal of Applied Physics 96, 6908 (2004);
Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes
Zh. M. Wang, Sh. Seydmohamadi, J. H. Lee, and G. J. Salamo
Applied Physics Letters 85, 5031 (2004);
Anisotropic photoconductivity of InGaAs quantum dot chains measured by terahertz pulse spectroscopy
D. G. Cooke, F. A. Hegmann, Yu. I. Mazur, W. Q. Ma, X. Wang, Z. M. Wang, G. J. Salamo, M. Xiao, T. D. Mishima, and M. B. Johnson
Applied Physics Letters 85, 3839 (2004);
Persistence of (In,Ga)As quantum-dot chains under index deviation from GaAs(100)
Z.M.Wang, Yu. I. Mazur, G.J.Salamo, P. M. Lytvin, V. V. Strelchuk, and M. Ya. Valakh
Applied Physics Letters 84, 4681 (2004);
InGaAs/GaAs three-dimensionally-ordered array of quantum dots
Yu.I.Mazur, W.Q.Ma, X.Wang, Z.M.Wang, G.J.Salamo, M.Xiao, T.D.Mishima, and M.Johnson
Applied Physics Letters 83, 987 (2003).